Power MOSFETs allow in-parallel operation for simplicity
IXYS has announced an expansion of its high voltage Power MOSFET product portfolio, the 2000V N-Channel Power MOSFETs. With a current rating of 1A, they are specifically designed for high voltage, high speed power conversion applications. Due to their positive temperature coefficient of RDS(ON), the high voltage power MOSFETs can be operated in parallel.
This eliminates the need for lower-voltage, series connected devices and enables cost effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability and PCB space saving.
These power MOSFETs are suitable for a wide variety of power switching systems, including high voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high voltage automated test equipment and energy tapping applications from the power grid.
The 2000V power MOSFETs are available in the following international standard size packages: TO-247, TO-247HV and TO-263HV. The latter two have increased creepage distances between leads, making them possible to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV and IXTA1N200P3HV.
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