Power MOSFETs achieve industry's 'lowest' resistance
A number of N-channel power MOSFETs have been released by Texas Instruments, expanding its NexFET product line. The MOSFETs include the 25V CSD16570Q5B and the 30V CSD17570Q5B, designed for hot swap and ORing applications, and the 12V CSD13383F4 for low-voltage battery-powered applications. Offered in a 0.6x1mm FemtoFET package, the CSD13383F4 achieves a resistance which is 84% lower than competing devices.
The CSD16570Q5B achieves a maximum of 0.59mΩ of Rdson, while the CSD17570Q5B achieves a maximum of 0.69mΩ of Rdson. According to the company, this is the industry’s lowest Rdson in a QFN package.
The NexFET CSD16570Q5B and CSD17570Q5B MOSFETs, which can be paired with a TI hot swap controller such as the TPS24720, are available now, priced from $1.08 and sold in 1,000-unit quantities. The CSD13383F4 MOSFET is also available now, priced from $0.10 and sold in the same unit quantities.
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