Power MOSFET from STMicroelectronics makes lighting more efficient

Continuous requests from the market for higher power density and lower cost in commercial lighting applications has pushed semiconductor manufacturers to drive device optimization to the limit. The new STD11NM60N, benefiting from the second generation of ST’s proprietary MDmeshTM technology, provides such optimization with a maximum RDS (ON) of 450 mOhm. The device’s resistance value is reduced by up to 55% compared to the previous MDmesh technology, without sacrificing tight control of its temperature dependence.

In addition to substantially reducing ON-state losses by minimizing the resistance value, the 600V device features an energy-optimized driver circuit which enables the MOSFET to drive higher currents at a lower VGS(th) (Voltage Gate Threshold). In fact, keeping the same threshold spread (2V), the range of VGS used to drive the device has been lowered, thus optimizing the drive and ensuring high noise immunity that prevents the circuit from switching on unintentionally.

The STD11NM60N features an excellent diode dv/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps customers cut heat-sink dimensions saving significant space board.

The small size of the chip, housed in very tiny DPAK/IPAK and TO-220FP packages, make it particularly suited to lighting applications such as High Power Factor electronic ballasts and High Intensity Discharge (HID) lamp electronic ballasts.

The STD11NM60N is available in volume now. Pricing is $0.90 in quantities of 10,000 pieces.