Patented technology improves IGBT performance; reduces power loss
The first device in the 650V H2-series IGBT family has been announced by Alpha & Omega Semiconductor. It is optimised for high speed switching performance.
The introductory device in the 650V H2-series IGBT family, the AOK40B65H2AL, has been optimised to deliver high-speed switching performance, says the company. The technology improves fast turn-off switching in applications such as welding machines, power factor correction and high switching converters.
The IGBT has been designed with the patent pending AlphaIGBT technology and is claimed to deliver industry-leading fast turn-off. It also offers low VCE(SAT) at 2.05V, which reduces power loss incurred during conduction and switching. The 650V minimum BVCES rating and BV performance allow for a larger safety margin to prevent sudden damage from voltage transients. The low turn-on di/dt and high turn-on dv/dt switching performance enable lower EMI design, adds the company.
Application areas are welding machines, power factor correction and renewable energy, all of which can benefit from the higher efficiency, system cost reduction and power quality regulation, contributing to overall system efficiency robustness, EMI management and long-term reliability.
As well as ruggedness and EMI performance, the IGBTs have a soft and fast freewheeling diode.
The AOK40B65H2AL is immediately available in production quantities with a lead time of 12 to 14 weeks.
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