Microsemi Releases New Generation of IGBTs for Industrial Applications

Microsemi's new power devices improve efficiency by delivering the industry's best loss performance—approximately 8 percent better than the closest competitor's IGBT. The NPT IGBTs also enable extremely high switching speeds of up to 150 kilohertz (kHz), which are further improved when the transistors are paired with Microsemi's silicon carbide (SiC) free-wheeling diodes. These leading edge 650V NPT IGBTs allow developers to reduce total system costs by replacing more costly 600V to 650V MOSFETs for lower speed applications up to 150 KHz.

All of the devices in the next-generation 650V product family are based on Microsemi's advanced Power MOS 8™ technology and leverage a state-of-the-art wafer thinning process. This enables a significant reduction in total switching losses and allows the devices to operate at incredibly fast switching frequencies compared to competitive solutions. With the company's rich heritage in the high-power, high-reliability markets, Microsemi expects to expand its share in the IGBT market, which is growing from $3.6 billion today to $6 billion in 2018, according to a recent report from Yole Developpement.

The NPT IGBTs are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high current modules. The devices are also short circuit withstand time rated (SCWT), providing reliable operation in harsh industrial environments.

The IGBT products are available in a variety packages including TO-247, T-MAX and modules.