NEC Electronics Europe Expands Lineup of SuperJunction1 Power MOSFETs for Automotive Applications

Compared with NEC Electronics’ own UMOS-4 trench technology, the SuperJunction1 technology reduces the gate charge and the input capacity by over 40% while maintaining the extremely low on-resistance RDS(on).

The new NP180N04TUJ and NP180N055TUJ Power MOSFETs features an advanced architecture and advanced package designed to manage heat dissipation and reduce power loss with one of the lowest markets RDS(on)max levels, 1.5 mΩ and 2.3 mΩ, respectively. Operating at 40V or 55V voltage drain source VDS and ID = 180 A, the new devices meet the demands of high performance application such as Electric Power Steering (EPS) or Integrated Starter Generators (ISG) that require high current capability.

The ISG is a key component concerning future demands on the vehicle such as the constantly growing number of electric devices or the increase of power efficiency. Apart from offering conventional starter and generator functions with one electrical machine, the ISG can be used to implement additional features such as start/stop, boost functions or recuperative braking.

Currently, eight devices are available with SuperJunction1 process technology, achieved by an ultra-fine design rule of 0.35µm. Four devices under development also feature NEC Electronics’ advanced TO-263-7 pin package, which support high drain current rating up to 180A. Like all members of the NP Series, the new devices are qualified to AEC-Q101, support up to 175 °C channel temperature and are lead free with tin-plated leads.
With its advanced process and packaging, NEC Electronics’ new SJ1 PowerMOSFETs help designers to overcome actual challenges to hit their required design targets.