Next-gen GaN HEMTs offer up to 70% efficiency

28th September 2017

Wolfspeed

Alice Matthews

0 0

Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), Wolfspeed, has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.

The new 28V GaN HEMT devices are developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs.

Available as both packaged devices (CG2H400 series) and bare die (CG2H800 series), the new GaN HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.

“By moving to our proven 0.25µm process for these next-gen devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” said Jim Milligan, RF and microwave Director, Wolfspeed. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes these devices suitable for an extensive range of RF power amplifier applications, including those for military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.

The CG2H400 series include these packaged 28V unmatched GaN HEMT devices:

CG2H40010 – 10W, 8GHz operation with 70% efficiency (at PSAT) and 18dB/16dB small signal gain (at 2.0 and 4.0GHz, respectively)
CG2H40025 – 25W, 6GHz operation with 65% efficiency (at PSAT) and 17dB/15dB small signal gain (at 2.0 and 4.0GHz, respectively)
CG2H40045 – 45W, 4GHz operation with 60% efficiency (at PSAT) and 18dB/14dB small signal gain (at 2.0 and 4.0GHz, respectively)

The CG2H400 series devices are available in screw-down flanged or solder-down pill packages.

The CG2H800 series include these bare die 28V unmatched GaN HEMT devices:

CG2H80015 – 15W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0 and 8.0GHz, respectively)
CG2H80030 – 30W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0 and 8.0GHz, respectively)
CG2H80060 – 60W, 8GHz operation with 65% efficiency (at PSAT) and 15dB/12dB small signal gain (at 4.0 and 8.0GHz, respectively)

Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. Wolfspeed GaN-on-SiC RF devices enable next-gen broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.