Nexperia launches new hotswap ASFETs

For several years, Nexperia has been combining proven MOSFET expertise and broad application understanding to develop ASFETs, devices in which critical MOSFET performance characteristics are enhanced to meet the requirements of particular applications. Since the launch of ASFETs, success has been seen with products optimised for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and more.

In-rush currents can present a reliability challenge in hotswap applications. Nexperia, the original pioneer of enhanced SOA MOSFETs, has addressed this concern by designing a portfolio of ‘ASFETs for Hotswap and Soft Start with enhanced SOA’ that are fully optimised for such applications. The PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12V @100mS) than previous technologies while having an RDS(on) (max) as low as 0.7mΩ. The Spirito effect (represented by the steeper downward slope found on SOA curves at higher voltages) has been eliminated, while exceptional performance is maintained across the full voltage and temperature range (compared to unoptimised devices).

Nexperia further supports designers by removing the need to thermally de-rate designs, by fully characterising these new devices at +125°C and providing hot SOA datasheet curves.

With eight new devices (three 25V and five 30V) available in a choice of LFPAK56 & LFPAK56E packages with RDS(on) ranging from 0.7mΩ to 2mΩ, the majority of hotswap and soft start applications are addressed. Two additional 25V products (which will have an even lower RDS(on) of 0.5mΩ) are planned for release over the coming months.