NEC introduces higher-performance DPAK package for PowerMOSFETs in automotive applications

The new variant, with a standard DPAK footprint, supports switching of current up to 90 A while reducing the on-resistance RDS(on). In conjunction with NEC Electronics’ UMOS-4 trench technology this means that RDS(on) values of 3.2 mΩ, 4.0 mΩ, 6.0 mΩ und 7.8 mΩ can be achieved for devices with breakthrough voltages of 30 V, 40 V, 55 V and 60 V.

Like all members of the NP Series, the new devices are qualified to AEC-Q101, support a channel temperature up to 175 °C and are fully RoHS-compliant thanks to tin-plated leads.
The enhanced DPAK package addresses the growing demand for higher-performance PowerMOSFETs with minimal space requirements, eg, for fast switching of high current in applications such as DC/DC controllers or motor control.