NEC announces HSON-8 package for PowerMOSFETs in automotive applications

The maximum current carrying capacity of the new package is 75 A. In conjunction with NEC Electronics’ UMOS-4 trench technology this means that an RDS(on) of 5.1 mΩ can be achieved for N-channel devices with VDSS = 40 V (NP75N04*UG) and of 6.2 mΩ for P-channel devices (NP75P03*DG) with VDSS = -30 V. N- and P-channel PowerMOSFETs with breakthrough voltages of -30 V, 40 V und 60 V are currently under development.

Like all members of the NP Series, the new devices are qualified to AEC-Q101, support a channel temperature up to 175 °C and are fully RoHS-compliant thanks to tin-plated leads.
The new HSON-8 package addresses the growing demand for high-performance PowerMOSFETs with small dimensions for space-constrained applications in automotive engineering, such as ABS and fuel injection systems.