Power

Navitas and GigaDevice will create joint lab

11th April 2025
Caitlin Gittins
0

Navitas Semiconductor has announced a new strategic partnership with GigaDevice, to create a joint-lab for integrating and tailoring Navitas’ GaNFast ICs & GigaDevice's microcontrollers, targeting AI data centres, EVs, solar, and energy saving systems.

As GaN and SiC power technologies are transitioning power conversion to faster, lighter, and more compact solutions, such as single-stage BDS converters, MCUs need to be optimised to maximise these extremely fast switching characteristics, such as high processing speeds and fast I/O capabilities. A co-developed solution of Navitas’ power and GigaDevice’s control will further accelerate the adoption of GaN and SiC into higher-power markets.

The joint R&D laboratory will integrate both company’s technical product and system-level application expertise to drive innovative advancements in intelligent and efficient power management solutions. Integrating Navitas’ next-generation, clean-energy, GaNFast technology with GigaDevice's advanced high-performance MCU products will facilitate a new level of integration, performance, and high-power-density digital-power solutions.

GigaDevice has been widely adopted across a wide range of sectors including power systems, industrial automation, automotive electronics, and motion control, with cumulative shipments exceeding 2 billion units. GigaDevice’s GD32 high-performance MCUseries has been designed to use leading technology and core architecture, with higher processing power, greater storage capacity, and richer on-chip resources, to bring high-end innovative experiences to developers for industrial automation, photovoltaic energy storage, graphic displays, digital power supplies, motor control, and other applications.

Navitas boasts a wide portfolio of GaNFast power ICs, which enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices.

The partnership follows Navitas’ strategy of creating an eco-system to support these next-gen, clean-energy solutions. Creating new high-speed isolated drivers, such as IsoFast, integrating ASICs with GaNSense ICsfor lower power applications, alongside partnering with high-frequency planar magnetics for high-frequency transformers, inductors, and EMI filters, enables simple integrated ‘one-stop shop’ solutions to allow designers to innovate and accelerate these next-gen GaN/SiC-based power electronics.

On 8th April, 2025, Vincent Li, GigaDevice Senior Vice President, CTO, General Manager of MCU Business Unit, and Charles Zha, VP and GM of Navitas Asia-Pacific, alongside other senior executives, attended the signing ceremony in Shanghai. Both parties shared their collaboration strategy and discussed operational models for the joint lab.

“Digital power stands as one of GigaDevice's core strategic markets. MCUs play a pivotal role in advancing the intelligence of digital power systems, enhancing energy efficiency, and ensuring operational security.” said Vincent Li, Senior Vice President, CTO, and General Manager of MCU BU, GigaDevice. “By working with Navitas, we will deeply integrate GigaDevice's advanced MCU with Navitas' leading GaNFast™ technology to develop competitive solutions for industrial automation and new energy vehicles. This collaboration not only technological synergy but also a critical step toward greener, more efficient industry development.”

“Navitas continues to innovate our GaNFast power IC technology to achieve our mission to ‘Electrify Our World’”, said Charles Zha, SVP and GM of Navitas Asia-Pacific. “The joint lab with GigaDevice will amplify our complementary strengths in IC design, manufacturing, and ecosystem development and accelerate R&D for next-gen, high-efficiency power solutions, reinforcing our 'Smart + Green' strategic vision. We look forward to delivering faster, energy-saving innovations to global customers and pioneering a new era of collaboration in power electronics."

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