N-channel MOSFETs feature gate capacitance down to 2164Pf

21st May 2015

onsemi

Siobhan O'Gorman

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Single n-channel MOSFETs targeted at data networking, telecomms and industrial applications have been introduced by ON Semiconductor. These devices are capable of delivering incredibly low on state resistance, RDS_(ON), values, thereby minimising conduction losses and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss) down to 2164Pf, which ensures driver losses are kept as low as possible.

With a rated breakdown voltage of 40V, the NTMFS5C404NLT, the NTMFS5C410NLT and the NTMFS5C442NLT MOSFETs have maximum RDS_(ON) values of 0.74, 0.9 and 2.8mΩ respectively, with continuous drain currents of 352, 315 and 127A respectively. These are complemented by the NTMFS5C604NL, the NTMFS5C612NL and the NTMFS5C646NL, all of which have breakdown voltage ratings of 60V. The maximum RDS_(ON) of these devices is 1.2, 1.5 and 4.7mΩ respectively, while their associated continuous drain currents are 287, 235 and 93 A. Both the 40V and 60V devices are rated to operate at junction temperatures up to 175˚C, thereby providing engineers greater thermal headroom for their designs. ON Semiconductor will be expanding this offering with devices which feature additional RDS_(ON) values and different packages, such as micro8FL, DPAK and TO220.

“Engineering teams at OEMs are constantly striving to create power system designs that are capable of attaining higher degrees of efficiency while simultaneously taking up less board space,” said Paul Leonard, Vice President and General Manager, Power Discrete Products, ON Semiconductor

The NTMFS5C404NL, NTMFS5C410NL, NTMFS5C442NL NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL are all offered in compact, RoHS-complaint SO8FL (DFN-8) packages with pricing starting at $0.42 per unit in 10,000-unit quantities.