MOSFETs' low RDS(on) reduces conduction losses

1st December 2014

Siobhan O'Gorman

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Datasheet

Designed for Li-ion battery protection applications, a broad portfolio of low-voltage MOSFETs has been released by International Rectifier. The MOSFETs, which are available as 20 and 30V devices in N-and P-Channel configurations, feature low RDS(on) to reduce conduction losses. Suitable for battery protection circuits with two cells in series, the devices are designed with a maximum gate drive of 12V_GS.

The portfolio includes the IRL6297SD, which offers two 20V N-Channel MOSFETs in a common drain configuration packaged in a compact, thermally efficient DirectFET Small Can package.

The MOSFETs are available in both DirectFET Small Can packages and industry standard packages. The low Rds(on) of the devices allows them to be used to replace MOSFETs in larger packages, reducing both board space and system cost.

The MOSFETs are MSL1 and RoHS compliant, containing no lead, bromide or halogen.

Stéphane Ernoux, Director, Power Management Devices Business Unit, IR, comments: “IR’s broad portfolio of MOSFETs for battery management is available in industry standard packages as well as the dual Small Can DirectFET for compact designs. As a result of the low Rds(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save both board space and reduce system cost.”

Pricing for the IRL6297SD begins at $0.45 each in 10,000 unit quantities, with production orders available now.