MOSFETs enable smaller, greener automotive power supplies

15th December 2015

Nat Bowers

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An AEC-Q101-qualified family of high-voltage N-channel power MOSFETs has been introduced by STMicroelectronics for automotive applications. The devices are built using ST’s state-of-the-art MDmesh DM2 super-junction technology with fast-recovery diode, feature a breakdown voltage over the 400-650V range and are housed in D2PAK, TO-220 and TO-247 packages.

The 400 and 500V devices are the industry's first AEC-Q101-qualified devices at these breakdown voltages, while the 600 and 650V devices offer higher performance than competitive products. All of these devices are tailored for automotive applications that require an integrated fast body diode, softer commutation behaviour and back-to-back gate-source zener protection. They are suited for full-bridge zero-voltage-switching topologies.

ST’s new Power MOSFETs offer the best performance in both Trr / Qrr and softness factor in the automotive market, while they are also among the best in turn-off energy (Eoff) at high currents, improving efficiency of automotive power supplies. In addition, excellent fast body-diode performance reduces EMI issues, allowing the use of smaller passive-filtering components. In this way, MDmesh DM2 technology enables 'greener' power design by reducing wasted energy, maximising the efficiency and minimising the form factor of the end products.

Key technical features include:

Fast-recovery body diode;
Extremely low gate charge and input capacitance of 44nC and 1850pF, respectively, for a 500V device in D²PAK;
Low on-resistance;
Best reverse recovery time (Trr): 120ns at 28A for a 600V device in TO-247 and 135ns at 48A for a 650V device in TO-247; and
Gate to Source zener-protected.

Prices range from $3.00 to $10.00 in 1,000 unit quantities, depending on breakdown voltage and package type.