MOSFET has higher power density for computing
Alpha and Omega Semiconductor claims that its new generation of XSPairFET sets a new industry standard for high power density applications. The AONE36132 is available in a DFN 3.3 x 3.3mm package.
The 25V n-channel MOSFET is synchronous buck converters, for computing, server and telecomms markets. It is designed with the latest bottom source packaging technology, says the company and has lower switch node ringing due to lower parasitic inductance.
The addition to the XSPairFET has an integrated high-side and low-side MOSFETs (seven and 2mOhms maximum on-resistance, respectively) within a DFN XSPairFET package. The low-side MOSFET source is connected directly to the exposed pad on a PCB to enhance thermal dissipation. According to the company, using an existing notebook design under typical conditions, 19V input, with 1.05V output, and a 21A output load condition, the AONE36132 had more than a 2% efficiency improvement when compared to a single DFN 5.0 x 6.0mm high side and single DFN 5.0 x 6.0mm low side configuration.
The AONE36132 is immediately available in production quantities with a lead-time of 12 to 14 weeks.
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