Power

MOSFET H-bridge simplifies inductive wireless charging

22nd January 2015
Nat Bowers
0
Datasheets

Cutting component counts and reducing PCB footprints by 50%, Diodes Incorporated has announced a pair of MOSFET H-bridges which simplify motor driving and inductive wireless charging circuits. The 40V DMHC4035LSD suits automotive motor driving applications, while the 30V DMHC3025LSD is suitable for 12V single-phase fan applications.

The DMHC3025LSD and DMHC4035LSD incorporate dual N-channel and dual P-channel MOSFETs to make a full H-Bridge in a single 5x6mm SO-8 footprint. This enables the devices to replace the equivalent four SOT23 or two SO-8 packages for space-constrained automotive and industrial applications such as low-power BLDC motor driving, fan control and similar requirements for driving inductive loads.

The devices provide low RDS(ON) performance, typically 45mΩ at 10VGS and 65mΩ at -10VGS, respectively, for the 40V N-channel and P-channel devices. This enables minimal conduction losses, allowing the H-bridges to tolerate higher continuous current under motor stall conditions.

The DMHC3025LSD and DMHC4035LSD are capable of supporting continuous currents of 3 and 2A, respectively, while under +70°C high ambient operating temperature. This allows them to accommodate worst-case motor stall currents.

The DMHC3025LSD and DMHC4035LSD H-bridges are available now for $0.40 each in 10,000 unit quantities.

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