MOSFET gate driver can prevent incoming reverse current flow
Able to be controlled by 3.3V logic input, a high-side N-channel Power MOSFET gate driver has been introduced by Toshiba Electronics Europe. Providing short-circuit protection/diagnosis functions and a feature to prevent the reverse current flow to itself in case of reverse battery situation, the TPD7104AF is designed for use in automotive applications.
Specific uses include power connect/disconnect switches in start/stop systems, semiconductor relays in ECUs and junction boxes in 12V battery system.
By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be easily created thanks to its built-in charge pump. By adding a shunt resistor, the short-circuit protection and diagnosis functions can also be utilised.
The TPD7104AF features a very low output leak current for reverse battery condition: IREV=-1uA (min) (@ Tj=25°C).Housed in a compact PS-8 package the device measures just 2.8x2.9mm.
Featured products
MAX17793
Analog Devices Inc.
3V to 80V, 3A, High-Efficiency, Synchronous Step-Down DC-DC Converter
| SKU: | MAX17793 |
|---|---|
| Stock: | 9316 |
| Cost: | $3.64 |
MAX22516
Analog Devices Inc.
IO-Link Data Link Controller with Transceiver and Integrated DC-DC
| SKU: | MAX22516 |
|---|---|
| Stock: | 8000 |
| Cost: | $5.42 |
