Lowest RDS(on) MOSFETs without compromising vital parameters

Very low RDS(on) is required by many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA, a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. With a maximum RDS(on) of 0.67mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.

This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 amps, and 100% final production test at up to 190 amps.

Devices are offered in LFPAK56 (Power-SO8) and LFPAK33 (Power33), both offering unique copper-clip construction which absorbs thermal stresses, increasing quality and reliability. The PSMNR58-30YLH is housed in LFPAK56, Nexperia’s four-pin Power-SO8 with a footprint of 30mm2 and a pitch of just 1.27mm.

Comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia: “The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability. This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications.”

Examples include: brushless DC (BLDC) motor control (full bridge, three-Phase topologies); server power for ORing, hotswap operation and synchronous rectification; battery protection; mobile fast-charge and DC load switch.