Low RDS(ON) MOSFETs for computing and communications

In order to significantly reduce conduction losses, the IRL6283M is supplied in a low profile 30mm² DirectFET Medium Can package. This combination of small package and ultra-low RDS(ON) makes the MOSFET suited for active ORing and electronic fuse (eFuse) applications.

The device can be used from 3.3, 5 or 12V rails and offers 15% lower losses at 20A than the best alternative PQFN devices in the same 30mm² form factor, enabling designers to reduce part count in high current applications.

As with the entire DirectFET family, the IRL6283M allows top-side cooling for enhanced electrical and thermal performance and wire bond-free construction for improved reliability. Moreover, the DirectFET package meets all RoHS requirements such as a completely lead-free bill of materials being well suited for long lifecycle designs. Alternative high performance packages feature high-lead die attach under RoHS exemption 7(a) which is due to expire in 2016. IR’s StrongIRFET family also includes PQFN devices with industry standard footprints in packages that feature an environmentally friendly, lead-free and RoHS compliant bill of materials.

“The expanded StrongIRFET family meets a market need for efficient switches for active ORing and electronic fuse (eFuse). The new IRL6283M offers industry leading RDS(ON) in a high performance package for unparalleled power density,” comments Stephane Ernoux, Director of Marketing, Power Management Devices Business Unit, International Rectifier.

Pricing for the IRL6283M DirectFET power MOSFET begins at $0.81 (USD) each in 10,000 unit quantities. Production orders are available immediately.