Low on-resistance MOSFET suitable for industrial applications

3rd March 2017

Toshiba

Alice Matthews

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Datasheet

Delivering low on-resistance and high-speed performance, Toshiba Electronics Europe has expanded its U-MOS IX-H series of low-voltage N-channel power MOSFETs with new 40 and 45V products. The new products - nine 40V and five 45V versions - are designed for industrial and consumer applications, including high-efficiency DC/DC converters, high-efficiency AC/DC converters, power supplies and motor drives.

The new MOSFETs use Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to combine the industry’s leading-class low on-resistance with low output charges that support efficient high-speed performance. Depending on the device, maximum R_DS(ON) (@V_GS=10V) ranges from 0.80-7.5mΩ.

The new structure lowers the performance index for the R_DS(ON)*Qsw figure of merit, improving switching applications to a level surpassing current Toshiba products. Output loss is improved by the reduction of output charge, which can contribute to higher system efficiency. Furthermore, the cell structures used in the new MOSFETs are optimised to suppress spike voltage and ringing during switching, which can contribute to lowering system EMI.

Main Packages are SOP-Advance 5x6mm and TSON-Advance 3x3mm. All of the new devices support 4.5V logic-level drives.