Low cost, high performance GaN power transistors announced

This new transistor line leverages GaN Systems’ technology leadership in 650V enhancement mode GaN HEMTs. The devices are packaged in thermally efficient, low cost PDFN packages with small 5.0x6.0mm footprint.

The specific device ratings are 3.5A, 8A, and 11A, ranging in RDS(on) from 500-150mΩ. Design benefits include low inductance, 5x6 footprint, and the three parts in the same footprint.

Unlike some suppliers who offer integrated solutions, GaN Systems offers a range of discrete devices to maximise design freedom, accommodate varied power levels, and allow power system engineers to maintain design control and change parameters to meet specific requirements such as EMI emissions.

With the introduction of GaN Systems’ evaluation kit for these devices, the EZDrive circuit is introduced which demonstrates a circuit design that eliminates the need for a discrete driver. The result is a low cost solution that offers more design flexibility, reduces the number of components, and is easy to implement all while providing the many benefits of GaN. It is adaptable to many power levels, switching frequencies, and LLC/PFC controllers.

GaN power transistors enable improved and new system designs for sleeker and lightweight electronic devices, faster charging systems, and more. For example, using GaN transistors result in AC adapters that are five times smaller and wireless charging solutions that have 50 times more wireless transfer transmit power.

“Combining our reliable GS-065 products with the EZDrive circuit empowers designers to easily take advantage of GaN by helping them achieve the power densities they want and offering the flexibility they need. For appliance customers, these devices offer great efficiency and large-scale SMD manufacturing benefits,” said Larry Spaziani, Vice President of Sales and Marketing at GaN Systems.