Load switches combine FET IP with low RDS ON

The GFET3 Integrated Power Switches (IPS) are provided in a WLCSP (wafer level chip scale packaging) and cover high-side power control applications from 1.0 to 4.0A.

The 0.64mm2 (0.8 x 0.8mm) SLG59M1730C (33mΩ/1.0A) and the SLG59M1736C (33mΩ/2.2 A) are low-leakage, self-powered pFET IPSs that can operate from 2.5 to 5.5V supply voltages. Both offer low-threshold on/off control, fast output voltage discharge, and a controlled input current profile on start-up. Small form-factor Li-Ion batteries exhibit very low amp-hour capacities, says the company, explaining why the SLG59M1730C and SLG59M1736C's controlled 16.5mA in-rush current profile on start-up prevents Li-ion battery voltage sag when Bluetooth radios or other high current-demand operations are enabled. When compared to other four-ball WLCSPs in the market with fast, fixed output voltage rise times, the magnitude of the in-rush current, which is directly proportional to the load capacitor value, can be quite large. If the in-rush current is large enough to cause the Li-Ion battery voltage to sag, it can cause an inadvertent system reset. The SLG59M1730C and SLG59M1736C's controlled in-rush current attribute prevents unintended system resets from occurring, says the company.

For higher-power tablet PC applications, the SLG59M1735C is a 10.5mΩ/4.0A nFET IPS. It is powered from 2.5 to 5.5V supplies, the input voltage range extends down to 0.9V to accommodate 1.0V high-current rails found in FPGA, ASIC, and processor power sequencing applications. The SLG59M1735C includes on/off control, soft-start control, under-voltage detection, and two-level current-limit protection.
According to the company, its 1.5mm2 SLG59M1735C is a 50% smaller footprint than other packaged products in its GFET3 portfolio, with similar features. Compared with other 4.0A WLCSP/DFN products with similar protection features, the SLG59M1735C’s footprint is 14 to 32% smaller.