Littelfuse's TVS diodes at Rutronik

These diodes have been specifically designed to protect the sensitive gate structures from both negative and positive overvoltages and can therefore be used as a replacement for two separate TVS diodes. This facilitates designs that are both cost-effective and space-saving, while minimising parasitic effects. They are particularly suitable for fast-switching SiC applications in the field of demanding power supply for AI/data centres, semiconductor/industrial equipment or e-mobility infrastructure. They are available in tape & reel standard packaging in various versions at Rutronik.

SiC MOSFETs typically feature a significantly lower negative than positive gate voltage. Therefore, asymmetric protection with two separate TVS diodes was previously required, which took up more space in the design. To address this challenge, Littelfuse offers the integrated asymmetric, bidirectional TVS diode Type SMFA.

The components impress with low inductance and excellent clamping capability. They meet the requirements of IEC 61000-4-2 at 30 kV air and 30 kV contact discharge, as well as those of flammability class UL94 V-0. The whisker test is carried out based on JEDEC JESD201A in accordance with Table 4a of Classes 1 and 2.

Depending on the required maximum gate voltage, various types with positive breakdown voltages (V_BR) between 17.6 V and 23.4 V are offered. The negative breakdown voltage is 7.15 V in each case.