Littelfuse junction X4-Class 200V power MOSFETs

The new devices expand upon the current 200 V X4-Class Ultra Junction MOSFETs, featuring some of the lowest on-state resistances available. Their high current ratings allow designers to replace multiple low-current-rated devices connected in parallel, streamlining the design process and enhancing reliability and power density in applications. Additionally, the screw-mounted terminals of the SOT-227B package enable rugged and stable mounting.

These new 200 V MOSFETs deliver the lowest on-state resistances, enhancing and complementing the existing Littelfuse X4-Class Ultra Junction family portfolio. Compared to the existing state-of-the-art X4-Class MOSFET solutions, these MOSFETs offer up to ~2x higher current ratings and RDS(on) values up to ~63% lower.

The new MOSFETs are ideal for a range of low-voltage power applications where minimising on-state losses is essential, including:

• Battery Energy Storage Systems (BESS)
• Battery chargers
• Battery formation
• DC/battery load switch
• Power supplies

“The new devices will allow designers to replace multiple low-current rated devices, connected in parallel, with a single device solution,” said Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse. “This unique solution simplifies gate driver design, improves reliability, improves power density and PCB space utilisation.”

The Ultra Junction X4-Class Power MOSFET offers the following key performance benefits:

• Low conduction losses
• Minimised parallel connection effort
• Simplified driver design with minimal driver losses
• Simplified thermal design
• Increased power density