IXYS unveil Industry's Highest Voltage Power MOSFET product line

Ideally suited for parallel device operation (providing cost-effective solutions compared to series-connected, lower-voltage MOSFET ones), these very high voltage MOSFETs feature a positive temperature coefficient of their on-state resistance. This also results in reduction in the associated gate drive circuitry, saving PCB board space, further simplifying the design, and improving overall system reliability.

“We all know from Physics 101, that it is more efficient to provide electrical energy efficiently with higher voltage than with higher current. Thus, we developed this technology, to enable power conversion or energy tapping from the electrical grid closer to the grid voltage. Numerous other industrial, transportation and medical applications require also high voltage control capabilities that these MOSFETs enable,” commented Dr. Nathan Zommer, Founder and CEO of IXYS.

An electrically isolated tab is provided for heat sinking, and a ceramic isolation of up to 4.5kV is achieved with the Direct Copper Bond substrate technology. The DCB provides low thermal impedance and best-in-class power and temperature cycling capabilities, while the molding epoxies meet the UL 94 V-0 flammability classification.

The new Power MOSFETs provide an optimal solution for applications such as high-voltage power supplies, high-voltage automated test equipment, laser and x-ray generation systems, tapping power from the high voltage grid, capacitor discharge circuits, and pulse circuits.

The new 4500V Power MOSFETs are available in IXYS’ proprietary high-voltage versions of the international standard packages: TO-263, TO-268, ISOPLUS i4-Pak, ISOPLUS i5-Pak. Part numbers include: IXTT02N450HV, IXTA02N450HV, IXTF02N450, IXTF1N450, IXTT1N450HV, and IXTL2N450, with collector current ratings of 200mA, 200mA, 200mA, 900mA, 1A, and 2A, respectively.