IR’s New 1200V IGBTs Deliver Higher Power Density and Increased Efficiency

Co-packaged with a soft recovery low Qrr diode and featuring a 10us minimum short circuit time rating, the devices are optimized for rugged industrial applications.

“These new 1200V trench IGBTs feature very low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability making them well suited to harsh industrial environments,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.

The packaged devices cover a broad current range from 10 – 50A. Other key performance benefits include Tjmax of 175°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.