R8 RAD-hard power MOSFETs for space POL applications

20th August 2013

Nat Bowers

0 0

Datasheet

International Rectifier has today revealed the introduction of two new high performance R8 radiation hardened power MOSFETs. Specifically designed for space grade point-of-load voltage regulator applications, the new IRHLNM87Y20SCS power MOSFETs offer extremely low on-state resistance (RDS(on)) of 12 milliohms (typical) and total gate charge of 18nC (typical). This is because the new R8 logic level power MOSFETs utilize Trench technology which increases efficiency performance by up to 6% compared to existing solutions.

Featuring aBVDSS rating of 20V and a maximum drain current rating of 17A, the IRHLNM87Y20SCS devices are available in IR’s new SMD 0.2 surface-mount style package which saves 50% spacecompared to the existing SMD 0.5 package solutions. They are also offered in a TO-39 package or in die form for microcircuit design solutions.

Tiva Bussarakons, Marketing Director, IR’s HiRel Business Unit, comments: “Delivering industry leading performance in the smallest footprint, and optimized for POL designs, IR’s new R8 RAD-Hard MOSFETs satisfy the space industry’s need to reduce the overall size and weight of the system while increasing efficiency.”

The products are fully characterized for radiation performance to 300Krads of TID and SEE with LET of 81 MeV-cm2/mg with VGS rating of 12V. Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be well suited for applications requiring a mission life of 15 years or more.

Specifications:

Availability and Pricing:

Pricing for the R8 MOSFETs begins at $594 each for 250-unit quantity. Production orders are available immediately. Prices are subject to change. This product is subject to U.S. export control laws and regulations.