Power Blocks deliver industry leading power density

The new Power Block devices feature an innovative package employing a leading-edge flipped-die technology that enables efficient dissipation of the heat from the source of the synchronous MOSFET directly to the ground layers of the PCB. They also feature an integrated monolithic FETKY. One of the new 5x6 dual devices may replace two 5x6 standard single devices, thanks to the improved thermal performance and increased power density of the IRFH4251D and IRFH4253D.

The new package also utilizes IR’s proprietary single copper clip already employed in PowIRStage and SupIRBuck products. They also offer an optimized layout that significantly reduces stray inductance to lower peak ringing, giving designers the option to use 25V MOSFETs instead of less efficient 30V devices.

Delivering higher current, efficiency and frequency capability in a small footprint, the IRFH4251D and IRFH4253D are optimised for 5V gate drive applications. The new Power Block devices work with any controller or driver to offer greater design flexibility compared to alternative approaches using two discrete 30V power MOSFETs.

“With its best-in-class silicon, and innovative features and packaging, the IRFH4251D and IRFH4253D Power Block devices offer industry leading power density for high performance DC-DC switching applications. The devices employ a more efficient layout that will define the new industry standard for DC-DC dual MOSFETs,” comments Stephane Ernoux, Director of Marketing at IR’s Power Management Devices Business Unit.

Specifications

Availability and pricing

Pricing for the IRFH4253D and IRFH4251D begins at $0.89 (USD) and $1.29 (USD) respectively in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change.