MOSFET allows superior power density in compact footprint

Leveraging IR’s benchmark COOLiRFET™ silicon technology, the 40V AUIRF8736M2 offers a 40% improvement in on-state resistance (Rds(on)) compared to previous generation devices to help minimize conduction losses. The dual-side cooling Medium Can DirectFET^®2 power package delivers excellent thermal performance and low parasitic inductance. 

The AUIRF8736M2 combines the performance of the COOLiRFET^™ silicon with the DirectFET^®2package, delivering a 40% Rds(on) improvement in the same footprint, or equivalent performance to a Large Can device in a 50% smaller package.

The device is qualified according to AEC-Q101 standards, features an environmentally-friendly 100% lead-free package and RoHS compliant bill of materials, and is part of IR’s automotive quality initiative targeting zero defects.