IR Introduces power MOSFET and IGBT drivers

Qualified to AEC-Q100 standards, the AUIRS2123S and AUIRS2124S high speed power MOSFET and IGBT drivers offer a gate drive supply range from 10V to 20V. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction while the floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration operating up to 600V. Both devices feature negative voltage spike (Vs) immunity to protect the system against catastrophic events during high-current switching and short circuit conditions.

Designed specifically for automotive applications, the new ICs use a proprietary latch immune CMOS technology featuring exceptional negative Vs immunity to deliver the ruggedness and reliability essential for harsh environments and automotive under-the-hood applications.

The AUIRS2123S features output signals in phase with the input signal while the AUIRS2124S features output signals out of phase with the input signal. Both devices provide under-voltage lockout and CMOS Schmitt-triggered inputs with pull-down.

The new ICs utilize IR’s advanced high-voltage IC process which incorporates next-generation high-voltage level-shifting and termination technology to deliver superior electrical over-stress protection and higher field reliability.