IR Expands Family of Robust, Reliable Automotive DirectFET®2 Power MOSFETs with System Scalability

The automotive-qualified DirectFET 2 devices offer overall system level size and cost reductions along with superior performance and efficiency when compared to traditional standard plastic packaged components. Featuring a PCB footprint 60 percent smaller than a D2Pak, the AUIRF7738L2 and AUIRF7737L2 DirectFET®2 devices deliver exceptionally low on-state resistance (RDS(on)), while the AUIRF7736M2 features a PCB footprint the same size as a 5x6 mm PQFN or SO-8 package with low RDS(on) of 2.5mOhm, making it suitable for more cost sensitive, lower power applications.

Utilizing IR’s advanced Trench silicon process, this expanded DirectFET®2 portfolio offers automotive systems designers the proven benefits of exceptional power density, dual-sided cooling and low parasitic package inductance and resistance in a robust, reliable and scalable power package.

The AUIRF7737L2 and AUIRF7738L2 share a common Large Can PCB footprint with the previously released AUIRF7739L2 making the devices highly desirable components where a scalable system design is required. With a package current rating of 315 A for both devices, the DirectFET® package places no constraint on current capability of the silicon. Moreover, the maximum package current ratings far exceed the limits of traditional DPak and D2Pak packages.

The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.

Datasheets, application notes and qualification standards are available on the International Rectifier website at www.irf.com. Spice and saber models are available on request. Production orders are available immediately.