IGBTs offered in E3 and SIMBUS F housings

7th August 2015

IXYS

Siobhan O'Gorman

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A line of IGBT power modules in industry standard E3 and SIMBUS F housings has been released by IXYS. The IGBTs feature the second generation XPT IGBTs, the X2PT IGBT technology, resulting in improved power switching performance with the high level of ruggedness that characterised the IXYS XPT and other IGBT products.

In combination with the advanced integrated Sonic diode dies, these modules provide substantial benefits to customers by offering reduced Eoff, lower VCEsat, a maximum junction temperature of 175°C, reduced Rth, low gate charge, square RBSOA and a 10ms short circuit capability.

The first modules launched are rated at 1200V/120A (MIXG120W1200TEH) and 1200V/180A (MIXG180W1200TEH) in a six-pack configuration in an E3 housing, and 1200V/330A (MIXG330PF1200TSF) and 1200V/490A (MIXG490PF1200TSF) in a phase leg in a SIMBUS F housing.

“With these latest additions to our IGBT portfolio, IXYS is offering economical and powerful solutions suitable for high reliability and efficient applications such as UPS, motor drives welding and solar inverters. The X2PT generation of IXYS’ XPT technology will allow our customers to benefit from better performance at lower cost in industry standard modules,” commented Neil LeJeune, Vice President of European Sales and Business Development, IXYS. “We continue investments in our technology and are committed to provide our customers with energy efficient solutions for power and motor control applications. We also offer custom IGBT configurations in these packages that are tailored to our customers’ specific needs.”