IGBTs offer strengths of both MOSFETs & IGBTs

The BiMOSFETs allow power circuit designers to reduce the number of power components required for their gate drive circuitry, by removing the need for multiple series-parallel lower voltage, lower current rated devices. This reduces design costs and increases reliability. 

The positive temperature coefficient of the on-state voltage and diode forward voltage allows the IGBTs to be operated in parallel and meet higher current requirements. Suppressing high voltage transients from inflicting damage to the device, the intrinsic body diode provides a path for the inductive load current.

The BiMOSFETs are suitable for a number of power switching systems, including switched mode and resonant mode power supplies, uninterruptable power supplies, laser and X-ray generators, capacitor discharge circuits and AC switches.

The IGBTs are offered in ISOPLUS i4-Pak, ISOPLUS i5-Pak and TO-247PLUS-HV package sizes. The ISOPLUS i4-Pak and ISOPLUS i5-Pak provide an electrical isolation of 4000V through the direct copper bond substrate technology. Featuring an increased creepage distance between leads, the TO-247PLUS-HV makes it possible to withstand higher voltages. The part numbers include IXBF20N360, IXBF50N360, IXBL60N360, and IXBX50N360HV, with collector current ratings of 45, 70, 92 and 125A, respectively.

“We at IXYS pioneered the concept of the reverse conducting IGBT which we call the ‘BiMOSFET’ family since it combines the best features of the power MOSFET and the BJT in one monolithic chip. It evolved from our invention of the Reverse Blocking IGBT, as covered in our US Patents No. 5,698,454, 6,091,086 and 6,936,908. We now extended the voltage rating of these devices to enable simpler high voltage conversion circuits with FET-like gate controls,” commented Dr. Nathan Zommer, CEO, IXYS Corporation, and co-inventor of this technology.