IGBT is optimised for soft switching applications

Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF utilizes IR’s Gen7 thin-wafer trench technology to deliver extremely low VCE(ON) and ultra-fast switching to offer lowest conduction and switching losses for high system efficiency in induction heating applications. Expanding the voltage range of the device to 1400V enables the design of higher power single-ended parallel resonant power converters and offers additional guard band for more robust designs.

“Leveraging IR’s 1400V Trench Gate, Field Stop technology, the IRG7PK35UD1PbF is optimized for lowest conduction and switching losses and enhanced system reliability in induction heating and soft switching applications,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.