Hyperfast diodes complement CoolMOS MOSFETs & discrete IGBTs
Infineon's new 650V Rapid 1 and Rapid 2 hyperfast diodes (IDP_, IDV_ and IDW_ series) are the perfect partners for CoolMOS™ MOSFETs or such discrete IGBTs as Infineon's Trenchstop™ 5. They offer outstanding value for money in AC/DC topologies like PFC, as well as for use as free-wheeling diodes in DC/DC topologies.
The Rapid 1 family from Infineon is optimized for VF (max. 1.7V) for switching frequencies between 18kHz and 40kHz, while the Rapid 2 range is optimized for Qrr to deliver outstanding performance between 40kHz and 100kHz. The Rapid 1 and Rapid 2 diodes feature dielectric strength of 650V, stable temperature characteristics of the most important electrical parameters, very low Irrm for improved turn-on losses on the boost switch, and a softness factor significantly higher than 1 for excellent EMI performance.
ST Microelectronics, with three new 600V tandem diodes (STTH_T_), is already releasing the second generation of their ultrafast tandem diodes on the market. These diodes are available in 8A and 12A designs for switching frequencies up to 100kHz, and stand out from competing products with minimized Qrr delivering extremely low switching losses. They are an ideal choice for use in all hard-switching applications. These new, ultrafast rectifier diodes from Infineon and ST Microelectronics are now in stock in the TO220AC, TO220AC-ISO and TO247 packages.
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