GaN textbook with power conversion applications focus

Gallium nitride (GaN) is leading edge technology that is displacing the venerable silicon MOSFET in power conversion applications. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly increase efficiency, and reduce size, weight, and cost.

This timely third edition has been substantially expanded to keep students and practising power conversion engineers ahead of the learning curve in GaN technology advancements and emerging applications. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and a wide range of applications.

Included: 

• Discussions on the fundamental physics of these power semiconductors.
• Practical guidance on layout and other circuit design considerations.
• Application examples employing GaN including lidar for autonomous vehicles, DC-DC power conversion, RF envelope tracking used in 5G communication networks, wireless power, class-D audio, and high radiation environments

Dr Fred C. Lee, Director, Centre for Power Electronics Systems at Virginia Tech, said: “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modelling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilisation of GaN in a wide range of emerging applications.”