GaN on Sapphire devices suit digital power supplies

In contrast to its competitors, Bruckewell uses a GaN on Sapphire process for its GaN products. The company says that this achieves better backside insulation and lower leakage currents compared to the more common GaN on Si technology. The process at Bruckewell is designed for 650V.

In order to provide customers with design flexibility, Bruckewell has developed the HMHL065N185C, a product based on a “normally on” GaN switch and a “normally off” Si MOSFET for the gate realization, resulting in a common “normally off” component. Bruckewell had the cost structure in mind here, as GaN “normally on” switches are less expensive to manufacture. The compatible gate voltage range of +/-20V is achieved.

This solution addresses power supplies in the power range from 20W to 3kW. With the CBR06P65HL, Bruckewell recommends a suitable SiC Schottky diode as the PFC diode.

For customers who prefer a more classic design, Bruckewell offers the HMHL065N210E, a 650V GaN Enhancement Mode Power Transistor.

The third product available is a GaN/Si cascode similar to the HMHL065N185C, but this time with an integrated gate driver circuit – the HMHL065N170CI.

This device further simplifies the control. The slew rate can be set via an external resistor RSET between 10 kOhm and 100 kOhm. The IC requires a supply voltage between 10V and 30V. It is controlled by a PWM with 5V or 15V at up to 1MHz.

All three GaN products from Bruckewell are available in an 8mm x 8mm PDFN package.

The products are available at distributor Ineltek.