GaN epiwafer solutions for 5G showcased

EpiGaN has taken up the 5G challenge and released large-diameter versions of its HVRF (High Voltage Radio Frequency) GaN-on-Si, as well as GaN-on-SiC wafer product families. Customers can choose from various optimised top structures to best serve their specific RF device needs, AlGaN, AlN or InAlN barriers combined with GaN or in-situ SiN caps, on Si substrates up to 200mm, and SiC up to 150mm diameter.

EpiGaN's HVRF products enable excellent dynamic behavior, highest power densities at mmW frequencies and lowest RF losses (less than 0.8dB/mm up to 110GHz). 

For ultimate RF performance in the 30- and 40-GHz millimeter wave bands assigned to 5G EpiGaN has developed HEMT heterostructures featuring ultra-thin AlN barrier layers in combination with an in-situ SiN capping layer. 

These structures allow locating the transistor’s gate very close to the densely populated channel, thus maximising the electrostatic coupling between the two. This results in a far superior RF transistor characteristics as needed for 5G MMIC developments. HEMT structures with lattice-matched InAlN barriers exhibit sheet resistivities below 250Ohm/sq and enable highest transistor current densities. 

EpiGaN Co-Founder and CEO Dr Marianne Germain, stated: "We are noticing an increasing demand in the market for our RF GaN product solutions optimised for 5G systems. EpiGaN is proud to offer an exceptionally broad portfolio of RF GaN epiwafer products that enables our global customer base to develop differentiated 5G cellular network solutions with industry-leading performance.“