Fairchild Expands PowerTrench MOSFET Family for SMPS Designs

Fairchild helps designers meet these power design challenges with the expansion of the PowerTrench MOSFET family.



Part of the mid-voltage power MOSFET portfolio, these devices are optimized power switches that combine a small gate charge (QG), a small reverse recovery charge (Qrr) and a soft-reverse recovery body diode, allowing for fast switching speeds. Available in a 40V, 60V and 80V rating, these devices require less power dissipation in the snubber circuitry due to an optimized soft-body diode that reduces voltage spikes by up to 15 percent over the competitor’s solution.



Employing a shielded-gate silicon technology that provides charge balance, the devices achieve higher power density, low ringing and better light-load efficiency. By using this technology, the devices achieve a lower figure of merit (QG x RDS(ON)) while reducing driving loss to increase power efficiency.



The first devices available include the 40V FDMS015N04B and 80V FDMS039N08B available in a Power56 package, and the 60V FDP020N06B and 80V FDP027N08B available in a TO-220 3-lead package.



Features and Benefits:

•Smaller package size (Power56 and TO-220 3-lead) with maximum thermal performance to system size

•Lower QG to reduce gate driving loss

•Low QGD/QGS ratio to prevent undesirable turn-on improving system reliability

•Low dynamic parasitic capacitances to reduce gate driving loss for high-frequency applications

•100% UIL tested

•RoHS Compliant



The addition of these new PowerTrench MOSFETs enhances Fairchild’s mid-voltage MOSFET offering. The devices are part of the comprehensive PowerTrench technology portfolio and are instrumental in achieving higher energy efficiency by meeting the electrical and thermal performance requirements for today’s electronics.



Price: US $ in 1,000 quantity pieces



FDMS015N04B: $1.78

FDMS039N08B: $1.60

FDP020N06B: $4.50

FDP027N08B: $3.30



Availability: Samples available upon request.



Delivery: 8-12 weeks ARO