Fairchild PowerTrench MOSFETs increase system efficiency, power density

To help designers meet this challenge, Fairchild Semiconductor has expanded the PowerTrench MOSFET family of 100 and 150V devices to include industrial-type packages, including the TO-220, D2PAK, TO247, I2PAK, TO220 Full Pack and D2PAK-7L.

Part of the mid-voltage power MOSFET portfolio, these devices are optimized power switches that combine a small gate charge (QG), a small reverse recovery charge (Qrr) and a soft reverse recovery body diode, which allows for fast switching for synchronous rectification in AC-DC power supplies.

These devices employ a shielded-gate structure that provides charge balance. By using this technology, the figure of merit (QG x RDS(ON)) is 66 percent lower than previous solutions, providing designers a high efficiency solution for applications including synchronous rectification, micro-solar inverters and off line UPS systems and PDU/BFU in telecom power distribution.

A low reverse recovery charge and the soft reverse recovery body diode reduces voltage spikes or oscillation in the system, eliminating the snubber circuit – or replacing a higher voltage rating MOSFET – enhancing efficiency and reducing the design bill of materials.

The first devices available in the industrial-type packages include the FDP083N15A_F102, FDB082N15A and FDP036N10A N-channel PowerTrench MOSFETs. Like all the devices in the PowerTrench MOSFET family, these devices offer fast switching speeds, low gate charge and high performance technology for extremely low RDS(ON). Additionally, devices in the family are available in RoHS-compliant, halogen and PB-free packaging, meeting environmental regulations.

The addition of these new PowerTrench devices enhances Fairchild’s mid-voltage MOSFET offering, and is part of a comprehensive portfolio of PowerTrench MOSFETs that are instrumental in achieving higher energy efficiency by meeting the electrical and thermal performance requirements for today’s electronics.