Dual N-Channel power MOSFETs for improved density
Taiwan Semiconductor, a global manufacturer of discrete devices (diodes, MOSFETs) and power management ICs, has expanded its product portfolio with Dual N-Channel Power MOSFET in a PDFN56 dual package. Samples and products are in stock and available now.
Taiwan Semiconductor's new Dual N-Channel Power MOSFETs in PDFN56 Dual package (TSM110NB04DCR, TSM150NB04DCR, TSM250NB06DCR, TSM300NB06DCR) deliver improved power density. The MOSFETs are available with 40V/60V breakdown voltages 25 to 38A current ratings and an RDSon of 15 to 30mΩ. The maximum junction temperature is 150°C.
Thanks to a low gate charge, fast switching frequencies are possible. All MOSFETS are avalanche and Rg tested. They have a very low on-resistance to minimise conduction losses, meet RoHS requirements and are halogen-free. Applications include BLDC motor control, battery power management, DC/DC converter and secondary synchronous rectification.
Featured products
MAX17793
Analog Devices Inc.
3V to 80V, 3A, High-Efficiency, Synchronous Step-Down DC-DC Converter
| SKU: | MAX17793 |
|---|---|
| Stock: | 9316 |
| Cost: | $3.64 |
MAX22516
Analog Devices Inc.
IO-Link Data Link Controller with Transceiver and Integrated DC-DC
| SKU: | MAX22516 |
|---|---|
| Stock: | 8000 |
| Cost: | $5.42 |
