DTMOS IV power MOSFETs integrate high speed diodes

14th October 2015

Toshiba

Nat Bowers

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Expanding its range of 600V DTMOS IV MOSFETs, Toshiba Electronics Europe has introduced versions featuring integrated High Speed Diodes (HSDs) for use in high efficiency power supplies and either full or half bridge motor control applications. The reverse recovery time of the HSDs suffers only from minimised thermal influence, ensuring fast switching across a wide range of temperatures.

The TK5P60W5 (with I_D = 4.5A and R_DS(ON) = 0.99Ω) is housed in the smallest package in the series, a DPAK (TO-252) package, and achieves a diode reverse recovery time of typically 65ns. The input capacitance (C_iss) of 370pF and a Q_Gof just 11.5nC, support efficient switching operation.

The TK62N60W5 (R_DS(ON) = 0.045Ω) is the largest MOSFET in the series, is housed in a 3-pin TO-247 package and supports the highest power output of I_D = 61.8A. It achieves a typical diode trr of 170ns, C_iss of 6,500pF and Q_G of 205nC.

The DTMOS IV-H chips are made using Toshiba’s Deep Trench technology that delivers lower R_DS(ON) at higher temperatures, compared to conventional super junction MOSFETs. It also offers reduced turn-off switching losses than previous technology generations. The combination of smaller increases in R_DS(ON)at high temperatures and reduced diode trrprovides higher efficiency and assists designers in minimising system size.

Samples of both devices are currently available, with TK62N60W5 already entering mass production and TK5P60W5 is scheduled to enter mass production in October 2015.