Compact high-voltage drive transistor arrays

20th September 2016

Toshiba

Anna Flockett

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A series of next-generation output transistor arrays that feature a DMOS FET type sink output has been announced by Toshiba Electronics Europe.The TBD62183AFNG and TBD62183AFWG are ideal for level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals.

The TBD62183AFNG and TBD62183AFWG deliver high-voltage drive capabilities with an input rating of 30V and output rating of 50V. An 8-channel sink type output is incorporated into the small SMD packages, enabling reduced component count for the control of multiple circuits.

In addition, the TBD62083A-series has an IOUT of 500mA/ch while the TBD2183A-series is designed for low power applications with a maximum IOUT of 50mA/ch.

By adopting a DMOS FET type output, the two new transistor arrays eliminate the need for a base current for the input pin. The devices achieve operation with a low maximum input current of 0.1mA @VIN=3V, while delivering very low power consumption. They also have output characteristics similar to the Vce (sat) properties of a Darlington Bipolar transistor, making them suitable for replacing in-line bipolar transistors in Toshiba’s TD62083A series.

The TBD62183AFNG is housed in an SSOP18 package and the TBD62183AFWG is in a SOL18 package. Target applications include white goods like fridges and coffee machines, battery charger, video surveillance systems, LED displays and industrial equipment such as welding machines.