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CISSOID introduces PROMETHEUS-II Power Transistor Driver reference design

16th March 2010

Cissoid

ES Admin

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CISSOID, a leader in high temperature semiconductor solutions, released PROMETHEUS-II, a fast High Temperature Power Transistor Driver reference design suitable for operation from -55°C up to +225°C. PROMETHEUS-II brings the solution to drive Silicon-Carbide (SiC), GaN and other Power Devices such as MOSFET’s, IGBT, JFET and BJT in highly demanding applications requiring reliable and continuous operation up to 225°C.

PROMETHEUS-II is the next product in Cissoid’s family of TITAN power drivers, which the company is going to further expand in the future. It is a reference design based on the recently introduced high temperature half-bridge driver CHT-HYPERION. All active components of the bill-of-material are high temperature proven products from Cissoid, ensuring reliable operation at extreme temperatures.

Compared to the earlier version, PROMETHEUS-II brings greater sink/source current capability, shorter delays and faster rise and fall times. The current capability depends on the MOSFETs used in the output push-pull stage. As an example, the CHT-NMOS4005 is able to sink up to 6A at 25°C in switching mode. For applications requiring higher current capabilities, the CHT-NMOS4010 (for 12A at 25°C) or CHT-NMOS4020 (for 22A at 25°C) can be used.