CISSOID Announce New High-Temperature 1200V/10A SiC MOSFET

It is available in a hermetically-sealed TO-257 metal package – the case being isolated from the switch terminals – and features low junction-to-case thermal resistance (1.1°C/W). The product is guaranteed for reliable operation on the full range -55°C to +225°C. It has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (Tj=225°C). The device features a body diode that can be used as free-wheeling diode.

The switch can be controlled with a typical gate voltage of -2V / +20V. The transistor’s RDS-ON exhibits 90mΩ at 25°C and 150mΩ at 225°C with VGS=20V. Support and characterization data can also be provided to drive the transistor at lower VGS voltages (e.g. 5V or 10V). This new device features low - and temperature-independent - switching energy of less than 400µJ at 600V/10A.

Jean-Christophe Doucet, VP Marketing at CISSOID said “CISSOID’s high-temperature semiconductor solutions work reliably with no hidden features. Guaranteeing a 1200V power device on the full temperature range up to 225°C with our usual reliability was a major challenge; we are delighted to bring this product to the market. We believe existing solutions were not satisfactory, and we see a tremendous interest for CHT-NEPTUNE.”

CISSOID was already offering the first isolated gate driver solution for SiC with 225°C rating (HADES); with this addition the company can now offer a complete, turnkey, solution combining the gate driver and the power switches, saving months of expensive and painful R&D for our customers.

CHT-NEPTUNE can be used together with CISSOID gate drivers CHT-THEMIS & ATLAS, and with the fully isolated half-bridge gate driver EVK-HADES. The combination HADES+NEPTUNE will save months of R&D to system designers when designing a motor drive or a power converter.

CHT-NEPTUNE can be ordered for sampling and evaluation under the part number CHT-PLA8543-TO257-T. Pricing starts at 287.38€ for 51 to 200 units.