Microsemi introduces new 650V SiC Schottky solution

15th October 2013

Nat Bowers

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Microsemi expands its silicon carbide Schottky product family with a new line of 650 volt solutions targeted at high-power industrial applications including solar inverters. Wide bandgap semiconductors such as SiC feature the most advanced material that is being considered by many power electronics and systems designers in their new designs.

SiC offers a number of benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity. These attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.

James Kerr, senior product marketing manager for Microsemi’s Power Products Group, comments: “Microsemi’s SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency. Silicon carbide is a game-changing technology for many of our customers. With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and roadmap that includes several new SiC products, Microsemi is positioned to capitalize on this growing market opportunity.”

Microsemi’s new 650V SiC Schottky diode product portfolio includes:

APT10SCD65K - 650V, 10A, TO-220 package.
APT10SCD65KCT - 650V, 10A, common cathode TO-220 package.
APT20SCD65K - 650V, 20A, TO-220 package.
APT30SCD65B - 650V, 30A, TO-247 package.

These new solutions are also used in the company’s power modules, which are used aerospace, welding, battery charging and other high-power industrial applications.

Availability

Microsemi's new 650V SiC Schottky diodes are in production now.