Power

Advanced Power Electronics New Power MOSFETs combine fast switching, low on-resistance and cost-effectiveness

7th February 2013
ES Admin
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Advanced Power Electronics has announced its highly cost-effective AP9412A family of N-channel enhancement–mode power MOSFETs which feature fast switching and low on-resistance. Available in SO-8, TO-252 and isolated TO-220CFM packages, the devices have a minimum drain-source breakdown voltage of 30V and a maximum RDS(on) of just 6mOhms.
Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “We specialise in providing parts that simplify the design engineering process by delivering excellent performance at an attractive price level. These new devices are a perfect example - the SO-8, TO-252 and TO-220CFM.”

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