Advanced Power Electronics Corp. Unveil Cost Effective Miniature Through-Hole Power MOSFETs

Ideally suited for low current applications such as small switch power supplies and load switches, the AP4002T N-channel enhancement-mode power MOSFETs feature fast switching characteristics and a low gate charge.

BVDSS is 600V, RDS(on) is 5Ω, and ID is 400mA. Devices also feature ROHS-compliant, halogen-free packaging.

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “Our power MOSFETs have been designed to with very simple drive requirements, and engineers can immediately enjoy the benefit of fast switching at a competitive price.”