AOS introduce high efficiency DrMOS power modules

27th August 2013

Nat Bowers

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Datasheet

Alpha and Omega Semiconductor has announced the first in a new generation of high efficiency power modules which are fully compliant with Intel’s DrMOS specifications. Housed in a 40-pin 6mm x 6mm QFN package, the AOZ5066 integrates a dual gate driver and two optimized MOSFETs which produce a high efficiency DC-DC synchronous buck power stage. The AOZ5066 enables high power density voltage regulator solutions ideal for servers, work stations, graphic cards and high-end desktop PC applications.

The AOZ5066 utilizes AOS’s proprietary state-of-the-art trench MOSFET and packaging technologies to improve efficiency and thermal performance over the previous generation solution. For example, the low-side MOSFET RDS(ON) of 1microOhm combined with the low Qg high-side MOSFET achieves an optimal balance between switching and conduction losses to increase overall efficiency by 1% at the 35A IOUT condition. Robustness is also improved with the higher input voltage and current ratings, 25V and 60A, respectively.

The versatile device works with a variety of analog and digital PWM controllers and is available in two options to support both 3.3V and 5V logic inputs.

Daniel Chang, Vice President of the Power IC Product Line at Alpha and Omega Semiconductor, commented: “Our new generation of DrMOS meets the ever increasing power density requirements of high-end computing applications by reducing the solution size by two-thirds compared to discrete solutions. In addition, the parasitic inductance between the driver and MOSFETs is minimized, allowing switching frequencies to 1MHz and faster dynamic response times."

Pricing and availability:

The AOZ5066 is available immediately in production quantities. with a unit price of $2.15 (USD) in 1,000 piece quantities.

1,000 pieces