Power
Alpha and Omega Semiconductor Releases Robust 600V AlphaMOS-II MOSFET Family
Alpha and Omega Semiconductor today introduced the AOTF11C60 and AOTF20C60, 600V MOSFETs with AlphaMOS II technology. The AlphaMOS II combines planar-like robustness and controlled switching characteristics with the low on-resistance performance of super-junction type devices.
The AOS’s new AlphaMOS II technology offers a simplified manufacturing process without compromising the core performance of the MOSFET. The AOTF11C60 and AOTF20C60 offer significant improvement in UIS capability over super-junction. Additionally the new family has been optimized for low noise operation and high efficiency by fine tuning the switching parameters. Their low RDS(ON), Ciss and Crss, make the new MOSFETs perfectly suited for designs that require high efficiency, robustness and reliability.
“As efficiency and reliability becomes more and more critical, power designers need high voltage MOSFETs which can withstand reverse recovery current spikes and can also reduce switching and conduction losses. With their unique structure, the new AlphaMOS II products help designers achieve all that in a more robust solution.” said Yalcin Bulut, Vice President of Discrete Product Lines at AOS.
AOTF11C60 Technical Highlights
- 600V N-channel MOSFET
- RDS(ON) < 0.4 Ohms max at VGS = 10V
- COSS = 108 pF typ
- Qg (10V) = 30 nC typ
AOTF20C60 Technical Highlights
- 600V N-channel MOSFET
- RDS(ON) < 0.25 Ohms max at VGS = 10V
- COSS = 190 pF typ
- Qg (10V) = 52 nC typ